Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series HiPerFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 550V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 22A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 43ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.27Ohm
Drain to Source Breakdown Voltage 550V
Pulsed Drain Current-Max (IDM) 88A
Turn Off Time-Max (toff) 150ns
Turn On Time-Max (ton) 100ns