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Package 4-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 370MA 4-DIP
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Inventory: 7921
Minimum: 1
Total Price: USD $9.35
Unit Price: USD $9.353558
≥1 USD $9.353558
≥10 USD $7.674765
≥100 USD $7.435365
≥500 USD $7.194968
≥1000 USD $6.955568

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP

Dimensions

Height 3.37mm
Length 5mm
Width 6.29mm

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 460mA
Number of Channels 1
Power Dissipation-Max 1W Ta
Power Dissipation 1.3W
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 370mA Ta
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 8.6ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.6 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 370mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Input Capacitance 360pF
Drain to Source Resistance 3Ohm
Rds On Max 3 Ω
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