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IRFIZ14G
Vishay SiliconixRoHS
/
Package TO-220-3 Full Pack, Isolated Tab
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 8A TO220FP
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Inventory: 27371
Minimum: 1
Total Price: USD $8.49
Unit Price: USD $8.492715
≥1 USD $8.492715
≥10 USD $6.968535
≥100 USD $6.75108
≥500 USD $6.533625
≥1000 USD $6.315173
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Number of Pins 3
Supplier Device Package TO-220-3
Weight 6.000006g
Dimensions
Height 9.8mm
Length 10.63mm
Width 4.83mm
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 27W Tc
Element Configuration Single
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 50ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 300pF
Drain to Source Resistance 200mOhm
Rds On Max 200 mΩ
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