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STP80NE03L-06

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 80A TO220
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Inventory: 2375
Minimum: 1
Total Price: USD $2.4
Unit Price: USD $2.396993
≥1 USD $2.396993
≥10 USD $1.966073
≥100 USD $1.905225
≥500 USD $1.84338
≥1000 USD $1.782533

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature 175°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Current Rating 80A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP80N
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 5V
Rise Time 260ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±22V
Fall Time (Typ) 165 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 22V
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 600 mJ
Feedback Cap-Max (Crss) 700 pF
Turn On Time-Max (ton) 405ns

Alternative Model

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