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STD11NM60N

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 10A DPAK
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Inventory: 9058
Minimum: 1
Total Price: USD $2.36
Unit Price: USD $2.357093
≥1 USD $2.357093
≥10 USD $1.934153
≥100 USD $1.874303
≥500 USD $1.813455
≥1000 USD $1.753605

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh? II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Current Rating 10A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD11
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 90W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 50V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 18.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.45Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 200 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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