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TK18A50D(STA4,Q,M)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 18A TO-220SIS
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Inventory: 113
Minimum: 1
Total Price: USD $3.03
Unit Price: USD $3.03072
≥1 USD $3.03072
≥10 USD $2.403694
≥100 USD $2.060243
≥500 USD $1.831331
≥1000 USD $1.568074
≥3000 USD $1.476506

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 50W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 270mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 50ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 2.6nF
Rds On Max 270 mΩ

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