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IXTP76N25T

IXYS
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 250V 76A TO-220
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Inventory: 150
Minimum: 1
Total Price: USD $5.53
Unit Price: USD $5.52552
≥1 USD $5.52552
≥10 USD $4.376988
≥100 USD $3.751717
≥500 USD $3.334882
≥1000 USD $2.855493
≥3000 USD $2.688748

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 460W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 460W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Rise Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 76A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.039Ohm
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 170A
Avalanche Energy Rating (Eas) 1500 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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