Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 400W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) 17A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 68A
Avalanche Energy Rating (Eas) 1000 mJ