Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 750mOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 780W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 780W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 7400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 45ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 75 ns
Reverse Recovery Time 300 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 80A
Dual Supply Voltage 1.2kV
Avalanche Energy Rating (Eas) 2000 mJ
Nominal Vgs 4.5 V