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APT66M60B2

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package TO-247-3 Variant
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 600V 70A 3-Pin(3+Tab) T-MAX
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Inventory: 982
Minimum: 1
Total Price: USD $9.55
Unit Price: USD $9.54737
≥1 USD $9.54737
≥10 USD $9.266565
≥100 USD $8.98576
≥500 USD $8.634753

Technical Details

Supply Chain

Factory Lead Time 18 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 90mOhm
Terminal Finish Pure Matte Tin (Sn)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 66A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1135W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 75 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 13190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Rise Time 85 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 225 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 245A

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Dimensions

Height 5.31mm
Length 21.46mm
Width 16.26mm

Alternative Model

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