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SI7862ADP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 16V 29A 5.4W 3.0mohm @ 4.5V
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Inventory: 8477
Minimum: 1
Total Price: USD $5.64
Unit Price: USD $5.638868
≥1 USD $5.638868
≥10 USD $4.626405
≥100 USD $4.481768
≥500 USD $4.33713
≥1000 USD $4.192493

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Weight 506.605978mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 42 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 29A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7340pF @ 8V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 80nC @ 4.5V
Rise Time 38ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.003Ohm
Drain to Source Breakdown Voltage 16V
Pulsed Drain Current-Max (IDM) 60A

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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