Operating Temperature -55°C~175°C TJ
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Reach Compliance Code compliant
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 176W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 60A
Drain-source On Resistance-Max 0.018Ohm
Pulsed Drain Current-Max (IDM) 180A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 500 mJ