SIHG17N60D-E3

Vishay Siliconix

RoHS

RoHS compliant

Package TO-247-3

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description MOSFET 600V 340mOhm@10V 17A N-Ch D-SRS

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Technical Details

Supply Chain

Factory Lead Time 20 Weeks

Compliance

Radiation Hardening No

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tube

Published 2015

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

Technology MOSFET (Metal Oxide)

Number of Elements 1

Number of Channels 1

Power Dissipation-Max 277.8W Tc

Element Configuration Single

Operating Mode ENHANCEMENT MODE

Case Connection DRAIN

Turn On Delay Time 22 ns

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 340m Ω @ 8A, 10V

Vgs(th) (Max) @ Id 5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds 1780pF @ 100V

Current - Continuous Drain (Id) @ 25°C 17A Tc

Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V

Rise Time 56ns

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±30V

Fall Time (Typ) 30 ns

Turn-Off Delay Time 37 ns

Continuous Drain Current (ID) 17A

JEDEC-95 Code TO-247AC

Gate to Source Voltage (Vgs) 5V

Drain to Source Breakdown Voltage 600V

Pulsed Drain Current-Max (IDM) 48A

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-247-3

Number of Pins 3

Weight 38.000013g

Transistor Element Material SILICON

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