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TK17E65W,S1X

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 17.3A TO-220AB
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Inventory: 1107
Minimum: 1
Total Price: USD $4.65
Unit Price: USD $4.645358
≥1 USD $4.645358
≥10 USD $3.811448
≥100 USD $3.692745
≥500 USD $3.574043
≥1000 USD $3.454343

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 165W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 8.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 900μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 300V
Current - Continuous Drain (Id) @ 25°C 17.3A Ta
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 17.3A

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