IPB042N03LGATMA1

Infineon Technologies

RoHS

RoHS compliant

Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) TO-263

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Technical Details

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins 3

Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Lead Free Contains Lead

Technical

Operating Temperature -55°C~175°C TJ

Packaging Tape & Reel (TR)

Published 2008

Series OptiMOS?

JESD-609 Code e3

Pbfree Code no

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 2

ECCN Code EAR99

Terminal Finish Tin (Sn)

Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Technology MOSFET (Metal Oxide)

Terminal Position SINGLE

Terminal Form GULL WING

Peak Reflow Temperature (Cel) NOT SPECIFIED

Reach Compliance Code not_compliant

Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Pin Count 4

JESD-30 Code R-PSSO-G2

Qualification Status Not Qualified

Number of Elements 1

Configuration SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max 79W Tc

Operating Mode ENHANCEMENT MODE

Power Dissipation 79W

Case Connection DRAIN

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 4.2m Ω @ 30A, 10V

Vgs(th) (Max) @ Id 2.2V @ 250μA

Halogen Free Halogen Free

Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 15V

Current - Continuous Drain (Id) @ 25°C 70A Tc

Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V

Vgs (Max) ±20V

Continuous Drain Current (ID) 70A

Gate to Source Voltage (Vgs) 20V

Max Dual Supply Voltage 30V

Drain-source On Resistance-Max 0.006Ohm

Pulsed Drain Current-Max (IDM) 400A

Avalanche Energy Rating (Eas) 60 mJ

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