TK10V60W,LVQ

Toshiba Semiconductor and Storage

RoHS

RoHS compliant

Package 4-VSFN Exposed Pad

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description MOSFET N-Ch DTMOSIV 600 V 88.3W 700pF 9.7A

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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ

Packaging Tape & Reel (TR)

Published 2015

Series DTMOSIV

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Max Operating Temperature 150°C

Min Operating Temperature -55°C

Technology MOSFET (Metal Oxide)

Number of Channels 1

Power Dissipation-Max 88.3W Tc

Turn On Delay Time 45 ns

FET Type N-Channel

Rds On (Max) @ Id, Vgs 380mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id 3.7V @ 500μA

Input Capacitance (Ciss) (Max) @ Vds 700pF @ 300V

Current - Continuous Drain (Id) @ 25°C 9.7A Ta

Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V

Rise Time 22ns

Drain to Source Voltage (Vdss) 600V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±30V

Fall Time (Typ) 5.5 ns

Turn-Off Delay Time 75 ns

Continuous Drain Current (ID) 9.7A

Gate to Source Voltage (Vgs) 30V

Drain to Source Breakdown Voltage 600V

Input Capacitance 700pF

FET Feature Super Junction

Drain to Source Resistance 380mOhm

Rds On Max 380 mΩ

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case 4-VSFN Exposed Pad

Number of Pins 5

Supplier Device Package 4-DFN-EP (8x8)

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