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TK10J80E,S1E

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN
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Inventory: 53
Minimum: 1
Total Price: USD $2.65
Unit Price: USD $2.65188
≥1 USD $2.65188
≥10 USD $2.101176
≥100 USD $1.801061
≥500 USD $1.600959
≥1000 USD $1.370819
≥3000 USD $1.290772

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Weight 6.961991g

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Series π-MOSVIII
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Turn On Delay Time 80 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 2nF
Drain to Source Resistance 700mOhm
Rds On Max 1 Ω

Compliance

RoHS Status RoHS Compliant

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