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IRLH5030TR2PBF

Infineon Technologies
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 13A 8PQFN
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package PQFN (5x6) Single Die

Technical

Packaging Cut Tape (CT)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation 250W
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 5185pF @ 50V
Current - Continuous Drain (Id) @ 25°C 13A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
Rise Time 72ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Input Capacitance 5.185nF
Recovery Time 48 ns
Drain to Source Resistance 9.9mOhm
Rds On Max 9 mΩ
Nominal Vgs 2.5 V

Dimensions

Height 990.6μm
Length 6.1468mm
Width 5.15mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant

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