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IXTP05N100P

IXYS
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
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Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series Polar?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 50W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 196pF @ 25V
Current - Continuous Drain (Id) @ 25°C 500mA Tc
Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 500mA
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 0.5A
Pulsed Drain Current-Max (IDM) 1.25A
DS Breakdown Voltage-Min 1000V
Avalanche Energy Rating (Eas) 50 mJ

Compliance

RoHS Status ROHS3 Compliant
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