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TPCF8A01(TE85L)

Toshiba Semiconductor and Storage
RoHS
/
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 3A VS-8
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series U-MOSIII
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 3A
Power Dissipation-Max 330mW Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 49m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 5V
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 2V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 4.4 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 12V
FET Feature Schottky Diode (Isolated)

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