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SPI10N10L

Infineon Technologies
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 10.3A I2PAK
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series SIPMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 10.3A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 154m Ω @ 8.1A, 10V
Vgs(th) (Max) @ Id 2V @ 21μA
Input Capacitance (Ciss) (Max) @ Vds 444pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.3A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 19.1ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 17.8 ns
Turn-Off Delay Time 27.8 ns
Continuous Drain Current (ID) 10.3A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.21Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 42.2A
Avalanche Energy Rating (Eas) 60 mJ

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