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SPB80N10L G

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 80A TO-263
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series SIPMOS?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 250W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14m Ω @ 58A, 10V
Vgs(th) (Max) @ Id 2V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 4540pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.024Ohm
Pulsed Drain Current-Max (IDM) 320A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 700 mJ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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