Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 900V
Technology MOSFET (Metal Oxide)
Current Rating 6.3A
Number of Elements 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection ISOLATED
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.9 Ω @ 3.15A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.3A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 110 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 6.3A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 25A
Avalanche Energy Rating (Eas) 850 mJ