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RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 51A TO-262
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET?
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 225
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 80W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.9m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 25V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 51A
Drain-source On Resistance-Max 0.0139Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 86 mJ

Compliance

RoHS Status Non-RoHS Compliant
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