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SI7411DN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 20V 11.4A 3.6W 19mohm @ 4.5V
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Inventory: 2976
Minimum: 1
Total Price: USD $0.29
Unit Price: USD $0.290273
≥1 USD $0.290273
≥10 USD $0.238403
≥100 USD $0.23142
≥500 USD $0.22344
≥1000 USD $0.216458

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 11.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 300μA
Current - Continuous Drain (Id) @ 25°C 7.5A Ta
Gate Charge (Qg) (Max) @ Vgs 41nC @ 4.5V
Rise Time 45ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 135 ns
Continuous Drain Current (ID) 7.5A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 30A

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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