Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.3MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 54W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 54W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 2.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4160pF @ 13V
Current - Continuous Drain (Id) @ 25°C 32A Ta 160A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 4.5V
Rise Time 42 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 33A
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 260A
FET Feature Schottky Diode (Body)