Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 560V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 21A
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 208W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 67 ns
Continuous Drain Current (ID) 21A
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Avalanche Energy Rating (Eas) 690 mJ