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RQ3L090GNTB

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description NCH 60V 30A MIDDLE POWER MOSFET
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Inventory: 17752
Minimum: 1
Total Price: USD $0.92
Unit Price: USD $0.924
≥1 USD $0.924
≥10 USD $0.754908
≥100 USD $0.586925
≥500 USD $0.497463
≥1000 USD $0.49203

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.9m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 2.7V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 30V
Current - Continuous Drain (Id) @ 25°C 9A Ta 30A Tc
Gate Charge (Qg) (Max) @ Vgs 24.5nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.0192Ohm
Pulsed Drain Current-Max (IDM) 36A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 12 mJ

Alternative Model

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