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RoHS
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Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-CHANNEL POWER MOSFET
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SIPMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.8W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 94μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120mA Ta
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V

Compliance

RoHS Status Non-RoHS Compliant
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