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FDMS86255ET150

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-Channel Shielded Gate PowerTrench? MOSFET 150V, 63A, 12.4mO
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Inventory: 740
Minimum: 1
Total Price: USD $5.57
Unit Price: USD $5.57172
≥1 USD $5.57172
≥10 USD $4.676364
≥100 USD $3.782856
≥500 USD $3.36251
≥1000 USD $2.879138

Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 56.5mg
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.3W Ta 136W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.4m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4480pF @ 75V
Current - Continuous Drain (Id) @ 25°C 10A Ta 63A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 4.5 ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.2 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 63A
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 276A

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