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IPA65R190C6XKSA1

Rochester Electronics, LLC
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-CHANNEL POWER MOSFET
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package PG-TO220 Full Pack

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 34W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 730μA
Input Capacitance (Ciss) (Max) @ Vds 1.62pF @ 100V
Current - Continuous Drain (Id) @ 25°C 20.2A Tc
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

Compliance

RoHS Status ROHS3 Compliant

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