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RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R
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Inventory: 11961
Minimum: 1
Total Price: USD $0.65
Unit Price: USD $0.6468
≥1 USD $0.6468
≥10 USD $0.559944
≥100 USD $0.387433
≥500 USD $0.323696
≥1000 USD $0.275491
≥3000 USD $0.245359

Technical Details

Supply Chain

Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 188mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 350mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -1A
JESD-30 Code R-PDSO-G4
Number of Elements 1
Power Dissipation-Max 2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 350m Ω @ 850mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
Rise Time 24 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 1.7A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 6.8A
Avalanche Energy Rating (Eas) 50 mJ

Dimensions

Height 1.7mm
Length 6.7mm
Width 3.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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