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NTHS5443T1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 3.6A CHIPFET
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Inventory: 18773
Minimum: 1
Total Price: USD $13.68
Unit Price: USD $13.683705
≥1 USD $13.683705
≥10 USD $11.22786
≥100 USD $10.87674
≥500 USD $10.52562
≥1000 USD $10.175498

Technical Details

Supply Chain

Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 18 hours ago)

Dimensions

Height 1.1mm
Length 3.1mm
Width 1.7mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating -3.6A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 8.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 14 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 4.9A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.065Ohm
Drain to Source Breakdown Voltage -20V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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