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SI8851EDB-T2-E1

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 30-XFBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description VISHAY SI8851EDB-T2-E1 MOSFET, P CHANNEL, -20V, -16.7A, MICRO FOOT
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Inventory: 6415
Minimum: 1
Total Price: USD $19.73
Unit Price: USD $19.733543
≥1 USD $19.733543
≥10 USD $16.19142
≥100 USD $15.685688
≥500 USD $15.179955
≥1000 USD $14.674223

Technical Details

Supply Chain

Factory Lead Time 21 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 30-XFBGA
Number of Pins 30
Transistor Element Material SILICON

Compliance

REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 30
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI8851
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 660mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 35 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 10V
Current - Continuous Drain (Id) @ 25°C 7.7A Ta
Gate Charge (Qg) (Max) @ Vgs 180nC @ 8V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) 16.7A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.0086Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 80A

Alternative Model

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