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SI5857DU-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? ChipFET? Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 6A PPAK CHIPFET
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? ChipFET? Dual
Supplier Device Package PowerPAK? ChipFet Dual
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series LITTLE FOOT?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 58mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 2.3W Ta 10.4W Tc
Turn On Delay Time 5 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 58mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Input Capacitance 480pF
FET Feature Schottky Diode (Isolated)
Drain to Source Resistance 58mOhm
Rds On Max 58 mΩ
Dimensions
Height 750μm
Length 3mm
Width 1.9mm
Compliance
RoHS Status ROHS3 Compliant
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