Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 57W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.9m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 10V
Current - Continuous Drain (Id) @ 25°C 67A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 42A
Drain-source On Resistance-Max 0.0079Ohm
Pulsed Drain Current-Max (IDM) 260A
DS Breakdown Voltage-Min 20V
Avalanche Energy Rating (Eas) 36 mJ