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IPP22N03S4L15AKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 22A TO220-3
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series OptiMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 31W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14.9m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 2.2V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 980pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.0149Ohm
Pulsed Drain Current-Max (IDM) 88A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 20 mJ

Compliance

RoHS Status RoHS Compliant
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