Packaging Cut Tape (CT)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 7.1MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2.8W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 2.8W
Turn On Delay Time 9.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.1mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 5.8 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.51nF
Recovery Time 26 ns
Drain to Source Resistance 7.1mOhm
Rds On Max 7.1 mΩ
Nominal Vgs 1.8 V