Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series HiPerFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 600W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 600W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 55ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.027Ohm
Drain to Source Breakdown Voltage 250V
Avalanche Energy Rating (Eas) 3000 mJ