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SI4108DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 75V 20.5A 7.8W 9.8mohm @ 10V
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Inventory: 16085
Minimum: 1
Total Price: USD $3.38
Unit Price: USD $3.38352
≥1 USD $3.38352
≥10 USD $2.776043
≥100 USD $2.68926
≥500 USD $2.602478
≥1000 USD $2.515695

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8

Technical

Packaging Cut Tape (CT)
Published 2017
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 7.8W
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 7.8W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.8m Ω @ 13.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 38V
Current - Continuous Drain (Id) @ 25°C 20.5A Tc
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Rise Time 11ns
Fall Time (Typ) 9 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 20.5A
JEDEC-95 Code MS-012AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 51.2 mJ

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Alternative Model

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