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RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 97A D2PAK
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Inventory: 2514
Minimum: 1
Total Price: USD $0.6
Unit Price: USD $0.595508
≥1 USD $0.595508
≥10 USD $0.488775
≥100 USD $0.473813
≥500 USD $0.457853
≥1000 USD $0.44289

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET?
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 9MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4820pF @ 50V
Current - Continuous Drain (Id) @ 25°C 97A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 52 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 97A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 242 mJ
Recovery Time 57 ns
Nominal Vgs 4 V

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 4.826mm
Length 10.668mm
Width 9.65mm
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