Operating Temperature -55┬?C~175┬?C TJ
Packaging Tube
Published 2008
Series HEXFET┬?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Resistance 4.1MOhm
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
Current Rating 170A
Number of Elements 1
Power Dissipation-Max 300W Tc
Power Dissipation 300W
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.1m ╬? @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150╬╝A
Input Capacitance (Ciss) (Max) @ Vds 6920pF @ 50V
Current - Continuous Drain (Id) @ 25┬?C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 68ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ┬?20V
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 170A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Dual Supply Voltage 75V
Recovery Time 54 ns
Nominal Vgs 4 V