Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 12A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.5W Ta 48W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 94m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 32.3ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 23.9 ns
Turn-Off Delay Time 25.2 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.094Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 45A
Avalanche Energy Rating (Eas) 61 mJ