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NTD78N03T4

ON Semiconductor
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 11.4A DPAK
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Inventory: 4094
Minimum: 1
Total Price: USD $46.75
Unit Price: USD $46.747838
≥1 USD $46.747838
≥10 USD $38.356868
≥100 USD $37.15887
≥500 USD $35.959875
≥1000 USD $34.76088

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 78A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.4W Ta 64W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 64W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 78A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 12V
Current - Continuous Drain (Id) @ 25°C 11.4A Ta 78A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Rise Time 68ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 78A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 11.4A
Drain-source On Resistance-Max 0.006Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 210A
Avalanche Energy Rating (Eas) 722.5 mJ

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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