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NTD85N02R

ON Semiconductor
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 24V 12A DPAK
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Inventory: 15060
Minimum: 1
Total Price: USD $2.83
Unit Price: USD $2.830905
≥1 USD $2.830905
≥10 USD $2.323178
≥100 USD $2.25036
≥500 USD $2.177543
≥1000 USD $2.104725

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 24V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 85A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.25W Ta 78.1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 20V
Current - Continuous Drain (Id) @ 25°C 12A Ta 85A Tc
Gate Charge (Qg) (Max) @ Vgs 17.7nC @ 5V
Rise Time 77ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 85A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.0052Ohm
Drain to Source Breakdown Voltage 24V
Pulsed Drain Current-Max (IDM) 192A
Avalanche Energy Rating (Eas) 85 mJ

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

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