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SSM6J53FE(TE85L,F)

Toshiba Semiconductor and Storage
RoHS
/
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 1.8A ES6
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Inventory: 1413
Minimum: 1
Total Price: USD $0.14
Unit Price: USD $0.141645
≥1 USD $0.141645
≥10 USD $0.11571
≥100 USD $0.112718
≥500 USD $0.108728
≥1000 USD $0.105735

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Power Dissipation-Max 500mW Ta
Power Dissipation 500mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 136m Ω @ 1A, 2.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 568pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 4V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 2.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 1.8A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V

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