Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series SIPMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 128W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 128W
Turn On Delay Time 9.5 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 240m Ω @ 10.6A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1.54mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 23 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 15A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -100V
Drain-source On Resistance-Max 0.24Ohm
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 60A