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IRF9383MTR1PBF

Infineon Technologies
RoHS
/
Package DirectFET? Isometric MX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 22A DIRECTFET
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 7
Supplier Device Package DIRECTFET? MX

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 2.9MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.1W Ta 113W Tc
Element Configuration Dual
Power Dissipation 2.1W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 2.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2.4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7305pF @ 15V
Current - Continuous Drain (Id) @ 25°C 22A Ta 160A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 160ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Input Capacitance 7.305nF
Drain to Source Resistance 3.8mOhm
Rds On Max 2.9 mΩ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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