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IRLZ44ZPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 51A TO-220AB
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Inventory: 22188
Minimum: 1
Total Price: USD $0.15
Unit Price: USD $0.150151
≥1 USD $0.150151
≥10 USD $0.145734
≥100 USD $0.141318
≥500 USD $0.135798

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 8.77mm
Length 10.668mm
Width 4.826mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 13.5mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 51A
Number of Elements 1
Power Dissipation-Max 80W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 80W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.5m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 5V
Rise Time 160 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 51A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 204A
Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 78 mJ
Recovery Time 32 ns
Nominal Vgs 3 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

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