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IXFN32N100Q3

IXYS
RoHS
RoHS RoHS compliant
Package SOT-227-4, miniBLOC
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 28A SOT-227
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Inventory: 136
Minimum: 1
Total Price: USD $56.4
Unit Price: USD $56.40096
≥1 USD $56.40096
≥10 USD $51.27276
≥100 USD $46.145576

Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Chassis Mount, Panel
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HiPerFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Reach Compliance Code unknown
Pin Count 4
Number of Elements 1
Power Dissipation-Max 780W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 780W
Case Connection ISOLATED
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 320m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9940pF @ 25V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Rise Time 300 ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.32Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 96A
Avalanche Energy Rating (Eas) 3000 mJ

Compliance

RoHS Status ROHS3 Compliant

Dimensions

Height 9.6mm
Length 38.23mm
Width 25.07mm

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